Packet-Pulse Dual Magnetron Sputtering
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The paper presents the results of experimental study of the discharge formed by a dual (DU) magnetron sputtering system (MSS) with aluminum targets in the mode of packet-pulse magnetron sputtering of high power (called deep oscillation magnetron sputtering (DOMS) in foreign literature). A special feature of the discharge in the DOMS mode is the use of unipolar sequence of micropulses with short durations and high powers that form macropulse duration 1000–3000 μs. This mode of sputtering was previously used only in single MSS. In this paper, the DOMS mode is first investigated with a dual magnetron sputtering system. The main plasma parameters are measured using triple and single Langmuir probes. Dependences of plasma parameters on the parameters of the pulsed discharge power supply: voltage and current amplitudes, current density, and power density on the target surface are established. The results of experiments show that the use of the dual packet-pulse magnetron sputtering can significantly increase the plasma density and the ion current density on the substrate in comparison with the traditional DC and MF modes of magnetron sputtering. The ratio of the ion flux density to the flux density of neutral atoms, characterizing the degree of ion bombardment of the growing coating in the DU DOMS mode, reached a value of 28, whereas in the DC mode it was 0.8.
KeywordsDOMS HIPIMS dual magnetron sputtering system reactive magnetron sputtering
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- 9.J. Lin, B. Wang, W. D. Sproul, et al., J. Phys. D, 46, 1–9 (2013).Google Scholar
- 10.I. V. Svadkovskii, in: Ion-Plasma Methods for the Formation of Thin-Film Coatings [in Russian], A. P. Dostanko, ed., Minsk (2002).Google Scholar
- 11.V. O. Oskirko, A. P. Pavlov, V. A. Semenov, et al., Izv. Vyssh. Ucheb. Zaved. Fizika, 61, No. 8/2, 173–176 (2018).Google Scholar
- 12.V. O. Oskirko, A. P. Pavlov, and A. S. Grenaderov, in: Reports of the XIV Int. Sci.-Pract. Conf. “Electronic Tools and Control Systems,” Vol. 1, Tomsk, (2018), pp. 164–167.Google Scholar