Advertisement

Russian Physics Journal

, Volume 62, Issue 6, pp 1082–1089 | Cite as

Photon-Drag Effect in p-Type Tellurium

  • R. Ya. RasulovEmail author
  • V. R. Rasulov
  • I. Eshboltaev
  • N. Z. Mamadalieva
Article
  • 1 Downloads

The paper suggests spectral and temperature dependences of the light absorption coefficient and photon-drag effect in p-type tellurium exposed to linear polarized light. The photon momentum is considered both in the law of conservation of energy and the matrix element of optical transition between subbands of tellurium valence band. Photoelectric current is measured as time approximation of the hole momentum relaxation.

Keywords

semiconductor polarized light optical transition holes photoelectric current tellurium 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    G. Ribakovs and A. A. Gundjian, J. Phys. C, 48, No. 11, 4601 (1977).Google Scholar
  2. 2.
    J. Auth, et al., Proc. XII Int. Conf. “Physics of Semiconductors”, Stuttgart (1974), p. 1252.Google Scholar
  3. 3.
    D. Gеnzov and E. Normantas, Phys. Stat. Sol. (b), 77, No. 2, 667 (1976).ADSCrossRefGoogle Scholar
  4. 4.
    E. Normantas, Fiz. Tekh. Poluprovodn., 11, No. 3, 630 (1982).Google Scholar
  5. 5.
    E. Normantas, D. Gentsov, and M. Moker, Fiz. Tekh. Poluprovodn., 16, No. 11, 2222 (1981).Google Scholar
  6. 6.
    R. Ya. Rasulov, Polarization optical and photovoltaic effects in semiconductors at linear and nonlinear light absorption, Dissert. Cand. Phys.-Math. Sci., Leningrad (1983).Google Scholar
  7. 7.
    E. L. Ivchenko and R. Ya. Rasulov, Symmetry and Real Band Structure of Semiconductors [in Russian], Fan, Tashkent (1992), 141 p.Google Scholar
  8. 8.
    R. Ya. Rasulov, Yu. E. Salenko, and D. Kambarov, Semiconductors, 36, No. 2, 141-147 (2002).ADSCrossRefGoogle Scholar
  9. 9.
    I. M. Tsidil'kovskii, Band Structure of Semiconductors [in Russian], Nauka, Moscow (1978), 328 p.Google Scholar
  10. 10.
    F. T. Vas'ko, Fiz. Tekh. Poluprovodn., 18, No. 1, 86 (1984).Google Scholar
  11. 11.
    V. F. Gantmakher and I. B. Levinson, Current Carrier Scattering in Metals and Semiconductors [in Russian], Nauka, Moscow (1984), 351 p.Google Scholar
  12. 12.
    A. I. Ansel'm, Introduction to Theory of Semiconductors [in Russian], Nauka, Moscow (1978), 616 p.Google Scholar
  13. 13.
    Е. M. Conwell, Kinetic Properties of Semiconductors in Strong Electric Fields [Russian translation], Mir, Moscow (1970), 384 p.Google Scholar
  14. 14.
    V. N. Abakumov, V. I. Perel', and I. N. Yassievich, Fiz. Tekh. Poluprovodn., 12, No. 1, 3 (1978).Google Scholar
  15. 15.
    P. N. Gorlei, R. S. Radchenko, and V. A. Shenderovskii, Transport Processes in Tellurium [in Russian], Naukova dumka, Kiev (1987), 180 p.Google Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • R. Ya. Rasulov
    • 1
    Email author
  • V. R. Rasulov
    • 1
  • I. Eshboltaev
    • 2
  • N. Z. Mamadalieva
    • 2
  1. 1.Fergana State UniversityFerganaRepublic of Uzbekistan
  2. 2.Kokand State Pedagogical InstituteKokandRepublic of Uzbekistan

Personalised recommendations