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Russian Physics Journal

, Volume 61, Issue 9, pp 1667–1673 | Cite as

Peculiarities of Kinetic Coefficients of Single Crystals of a Layered р-GaSe Semiconductor

  • A. Sh. AbdinovEmail author
  • R. F. Babaeva
Article
  • 3 Downloads

The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical conductivity, and charge carrier mobility on the temperature, electric field strength, and doping with rare-earth elements are investigated in single crystals of p-type gallium selenide. It has been established that in the low-temperature region, these dependences have a peculiarity caused by the presence of random macroscopic defects in the samples under study. At a small level of doping of p-GaSe single crystals with Gd and Er, a non-monotonic dependence of the mobility and electrical conductivity on the content of the introduced impurity is observed.

Keywords

doping electrical conductivity Hall coefficient mobility random macroscopic defects impurities 

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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Baku State UniversityBakuAzerbaijan
  2. 2.Azerbaijan State University of EconomicsBakuAzerbaijan

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