Russian Physics Journal

, Volume 61, Issue 9, pp 1667–1673 | Cite as

Peculiarities of Kinetic Coefficients of Single Crystals of a Layered р-GaSe Semiconductor

  • A. Sh. AbdinovEmail author
  • R. F. Babaeva

The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical conductivity, and charge carrier mobility on the temperature, electric field strength, and doping with rare-earth elements are investigated in single crystals of p-type gallium selenide. It has been established that in the low-temperature region, these dependences have a peculiarity caused by the presence of random macroscopic defects in the samples under study. At a small level of doping of p-GaSe single crystals with Gd and Er, a non-monotonic dependence of the mobility and electrical conductivity on the content of the introduced impurity is observed.


doping electrical conductivity Hall coefficient mobility random macroscopic defects impurities 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    G. Fisher, Helv. Phys. Acta., 36, (1963) 317–333.Google Scholar
  2. 2.
    M. K. Anis and A. R. Piercy, J. Phys. D: Appl. Phys., 17, No. 6, 1229–1232 (1984).ADSCrossRefGoogle Scholar
  3. 3.
    F. I. Ismailov, F. A. Akhundov, and O. R. Vernich, Phys. Stat. Sol. B, 17, Iss. 23, k237–k240 (1966).ADSCrossRefGoogle Scholar
  4. 4.
    V. Augelli, C. Manfredotti, R. Murri, and L. Vasanelli, Phys. Rev. B, 17, Iss. 8, 3221–3226 (1978).ADSCrossRefGoogle Scholar
  5. 5.
    C. Manfredotti, A. Rizzo, C. De Blasi, et al., J. Appl. Phys., 46, Iss. 10, 4531– 4536 (1975).ADSCrossRefGoogle Scholar
  6. 6.
    C. Manfredotti, A. M. Mancini, R. Murr, et al., Il Nuovo Cimento B, 39, Iss. 1, 257–268 (1977).ADSCrossRefGoogle Scholar
  7. 7.
    Yu-Kuei Hsu, Chen-Shiung Chang, and Wen-Chang Huang, J. Appl. Phys., 96, Iss. 3, 1563–1567 (2004).ADSCrossRefGoogle Scholar
  8. 8.
    A. Sh. Abdinov, R. F. Babaeva, R. M. Rzaev, and S. I. Amirova, Neorg. Mater., 48, No. 6, 649–653 (2012).CrossRefGoogle Scholar
  9. 9.
    A. Sh. Abdinov, R. F. Babaeva, N. A. Ragimova, et al., Neorg. Mater., 50, No. 4, 362–367 (2014).CrossRefGoogle Scholar
  10. 10.
    M. Lampert and P. Mark, Injection Currents in Solids [Russian translation], Mir, Moscow (1973).Google Scholar
  11. 11.
    A. Sh. Abdinov, A. G. Kyazymzadeh, and A. A. Akhmedov, Fiz. Tekh. Poluprovodn., 10, No. 13, 2299– 2303 (1976).Google Scholar
  12. 12.
    A. Sh. Abdinov and A. G. Kyazymzade, Fiz. Tekh. Poluprovodn., 9, No. 11, 2135– 2138 (1975).Google Scholar
  13. 13.
    A. Kokh, V. V. Atuchin, T. A. Gavrilova, et al., J. Microscopy, 256, Iss. 3, 208–212 (2014).CrossRefGoogle Scholar
  14. 14.
    N. Khennei, Solid state chemistry Solids [Russian translation], Mir, Moscow (1971).Google Scholar
  15. 15.
    Ya. A. Ugai, General Inorganic Chemistry [in Russian], Vyssh. Shkola, Moscow (1997).Google Scholar
  16. 16.
    Properties of Elements, Reference Book, Ed. M. E. Drits [in Russian], Metallurgiya, Moscow (1985).Google Scholar
  17. 17.
    Jellinek Von Franz and Harry Hahn, Z. Naturforsch. B, 16b, 713–715 (1961).Google Scholar
  18. 18.
    A. Kuhn, A. Chevy, and R. Chevalier, Рhys. Stat. Sol. (a), 31, Iss. 2, 469–475 (1975).ADSCrossRefGoogle Scholar
  19. 19.
    G. A. Akhundov, A. Sh. Abdinov, N. M. Mekhtiev, and A. G. Kyazymzade, Fiz. Tekh. Poluprovodn., 7, 1830–1833 (1973).Google Scholar
  20. 20.
    B. M. Аskerov. Electron Transport Phenomena in Semiconductors, World Scientific, Singapore, New Jersey, London (1994).Google Scholar
  21. 21.
    L. E. Vorob’yev, S. N. Danilov, E. L. Ivchenko, et al., Kinetic and Optical Phenomena in Strong Electric Fields [in Russian], Nauka, St. Petersburg (2000).Google Scholar
  22. 22.
    E. D. Golovkina, N. N. Levchenya, and A. Ya. Shik, Fiz. Tekh. Poluprovodn., 10, Vyp. 2, 383–386 (1976).Google Scholar
  23. 23.
    A. Sh. Abdinov and R. F. Babaeva, Prikladn. Fiz., No. 5, 74–78 (2004).Google Scholar
  24. 24.
    Yu-Kuei Hsu, Chen-Shiung Chang, and Wen-Feng Hsieh, Jpn. J. Appl. Phys., Part 1, No. 7A, 4222–4225 (2003).Google Scholar
  25. 25.
    B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1979).Google Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Baku State UniversityBakuAzerbaijan
  2. 2.Azerbaijan State University of EconomicsBakuAzerbaijan

Personalised recommendations