Temperature Behavior of Plasma Reflection Spectra of (Bi2–xSbx)Te3 (0 < х < 1) Crystals in the Temperature Interval 80–300 K
A decrease in the resonant frequency ωр of plasma fluctuations of free charge carriers with increasing temperature observed in all Bi2-xSbx (0 < х < 1) crystals can be explained only partly by the increased polarization background ε∞ of the crystal. An analysis of the experimental data allows us to state that the change of ωр and of the electrical conductivity σ is also caused by the decrease of the ratio of the free carrier concentration to their effective mass r/m* (by a factor of 1.47) whose value almost coincides with the anomalous increase in the Hall coefficient in the temperature interval from 80 to 300 K.
Keywordssemiconductors plasma resonance concentration effective mass of free charge carriers electrical conductivity
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