Russian Physics Journal

, Volume 57, Issue 8, pp 1070–1081 | Cite as

Admittance in MIS Structures Based on Graded-GAP MBE p-Hg1–х Cd х Te (x = 0.22–0.23) in the Strong Inversion Mode

  • A. V. Voitsekhovskii
  • S. N. Nesmelov
  • S. М. Dzyadukh
PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Admittance of MIS structures based on the graded-gap MBE (molecular beam epitaxy) p-Hg1–хCdхTe (x = 0.22–0.23) is studied in the strong inversion mode at temperatures of 8–140 K. Using the measurements of admittance, the values of main elements of the equivalent circuit in the strong inversion mode were determined as a function of temperature and bias voltage. It is shown that for MIS structures based on graded-gap MBE р-Hg1–хCdхTe (x = 0.23) doped with As to a concentration of 1017 сm−3, the differential resistance of space charge region is limited by the tunnel generation processes in the temperature range 8–100 K. It is found that for MIS structures based on MBE р-Hg1–хCdхTe (x = 0.22) with the hole concentration of (8–9)⋅1015 сm−3, regardless of the presence of a graded-gap layer, the differential resistance of space charge region in the temperature range 40–80 K is limited by the Shockley–Read generation processes. A high-temperature drop of the differential resistance of space charge region is due to the diffusion of minority charge carriers from the quasi-neutral bulk.

Keywords

MIS structure HgCdTe molecular beam epitaxy the graded-gap layer admittance inversion capacitance the relaxation time the resistance of space charge region 
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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • A. V. Voitsekhovskii
    • 1
  • S. N. Nesmelov
    • 1
  • S. М. Dzyadukh
    • 1
  1. 1.National Research Tomsk State UniversityTomskRussia

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