Russian Physics Journal

, Volume 55, Issue 12, pp 1393–1401 | Cite as

Simulation of Electronic Properties of Silicon Nanotubes

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Using the concepts of quantum mechanics, the atomic and electronic structure of single-layer silicon chiral nanotubes is considered. The expressions for density of states and conductivity of silicon and carbon nanotubes doped with metals are presented.

Keywords

nanotube atomic structure silicon metal DOS energy spectrum 
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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.The Lipetsk State Pedagogical UniversityLipetskRussia

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