Russian Physics Journal

, Volume 52, Issue 2, pp 163–169 | Cite as

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

Article
First Online:
Received:
Revised:

The effect of base thickness (π-layer thickness d π) on the reverse current-voltage characteristic and the switching voltage U sw in a diffusion avalanche S-diode is studied. It is shown that the current-voltage characteristic shape is independent of d π, whereas the switching voltage U sw weakly decreases (to 40%) with a significant (4–5-fold) decrease in d π. It is assumed that the results obtained can be explained, taking into account electron injection from the forward-biased contact to the π-layer.

Keywords

gallium arsenide S-diode current-voltage characteristic avalanche breakdown 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    S. S. Khludkov, Sov. Phys. J., No. 10, 928 (1983).Google Scholar
  2. 2.
    V. I. Gaman, Sov. Phys. J., No.10, 938 (1983).Google Scholar
  3. 3.
    O. P. Tolbanov and S. S. Khludkov, Fiz. Tekh. Poluprovodn., 20, No. 11, 2072 (1986).Google Scholar
  4. 4.
    S. S. Khludkov and O. P. Tolbanov, Russ. Phys. J., No. 9, 806 (1992).Google Scholar
  5. 5.
    D. D. Karimbaev, A. V. Koretskii, Yu. D. Pavlov, et al., Electron. Prom., No. 9, 62 (1993).Google Scholar
  6. 6.
    I. A. Prudaev and S. S. Khludkov, Russ. Phys. J., No.11, 1157 (2008).Google Scholar
  7. 7.
    J. S. Blakemore, Semiconductor Statistics, Pergamon Press, New York, 1962.MATHGoogle Scholar
  8. 8.
    V. A. Uskov and V. N. Sorvina, Izv. AN SSSR, Neorg. Mater., 10, No. 6, 1041 (1974).Google Scholar
  9. 9.
    B. I. Boltaks, G. S. Kulikov, I. M. Nikulina, et. al., Izv. AN SSSR, Neorg. Mater., 11, No. 2, 348 (1975).Google Scholar
  10. 10.
    V. N. Il’yushenko (ed.), Picosecond Pulse Devices [in Russian], Energoatomizdat, Moscow, 1993.Google Scholar
  11. 11.
    N. N. Polyakov and V. L. Kon’kov, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 9, 100 (1970).Google Scholar
  12. 12.
    A. Goetzberger and C. Stephens, J. Appl. Phys., 32, No. 12, 2646 (1961).CrossRefADSGoogle Scholar
  13. 13.
    I. V. Grekhov, Yu. N. Kryukova, and V. E. Chelnokov, Fiz. Tverd. Tela, No. 8, 3474 (1966).Google Scholar
  14. 14.
    S. S. Khludkov, O. P. Tolbanov, and A. V. Koretskii, Sov. Phys. J., No. 4, 298 (1986).Google Scholar
  15. 15.
    R. M. Haits, Phys. Rev., 138, No. 1А, А260 (1965).CrossRefADSGoogle Scholar
  16. 16.
    V. A. Kuz’min and A. S. Kyuregyan, Radiotekhnika i Electronika, 20, No. 7, 1449 (1975).Google Scholar
  17. 17.
    S. M. Zee, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.Google Scholar
  18. 18.
    V. I. Gaman, Physics of Semiconductor Devices [in Russian], Izd. NTL, Tomsk, 2000.Google Scholar

Copyright information

© Springer Science+Business Media, Inc. 2009

Authors and Affiliations

  1. 1.Tomsk State UniversityTomskRussia
  2. 2.V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State UniversityTomskRussia

Personalised recommendations