Russian Microelectronics

, Volume 34, Issue 3, pp 160–172 | Cite as

Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

  • R. D. Tikhonov
Micro- and Nanoelectronic Devices
Received:

Abstract

For the base-in-well bipolar magnetotransistor, a computer simulation is conducted in conjunction with an experiment. The following points are made: (i) Bulk recombination is important in the response of the device to an applied magnetic field. (ii) The device shows threshold behavior. (iii) The relative magnetic-field sensitivity of collector current is dependent on the applied magnetic flux density; moreover, the former grows in magnitude with decreasing flux density if this is sufficiently low. (iv) The relative sensitivity changes sign as the base bias is varied. A maximum relative sensitivity of about 2000 T−1 is achieved in measurements of the earth’s magnetic field.

Keywords

Magnetic Field Recombination Computer Simulation Flux Density Magnetic Flux 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© MAIK “Nauka/Interperiodica” 2005

Authors and Affiliations

  • R. D. Tikhonov
    • 1
  1. 1.Technological CentreMoscow Institute of Electronic Engineering (Technical University)MoscowRussia

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