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Versatile, metal free and temperature-controlled g-C3N4 as a highly efficient and robust photocatalyst for the degradation of organic pollutants

  • Kasirajan Prakash
  • Puvaneswaran Senthil Kumar
  • Sekar Pandiaraj
  • Swaminathan KaruthapandianEmail author
Article
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Abstract

In the present study, we report novel graphitic carbon nitride (g-C3N4) nanosheets at different calcination temperatures viz 500 °C, 550 °C and 600 °C by the simple hydrothermal synthesis for photocatalytic degradation of organic contaminants. The crystal structure, optical properties, and surface morphology were studied by various tools such as X-ray diffraction, UV–visible spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy and transmission electron microscopy analysis. The as-synthesized g-C3N4 nanosheets exhibited a hexagonal phase and had good crystallinity with a crystallite size of ~ 68 nm. The photodegradation efficiency of g-C3N4 nanosheets showed excellent photocatalytic activity towards RhB and CV dye solution, and the dye degraded within 70 and 60 min, respectively. The g-C3N4 @550 °C nanosheets showed superior photocatalytic activity due to the adsorption capability and delayed electron hole recombination rate. In addition, the photocatalytic mechanism and reusability test were also found by trapping experiments.

Graphical abstract

The proposed photogenerated electron–hole separation mechanism of the g-C3N4 photocatalyst.

Keywords

g-C3N4 nanosheets Visible light Rhodamine B Semiconductors 

Notes

Acknowledgements

The authors express their sincere thanks to the College managing board, Principal and Head of the Department, VHNSN College for providing necessary research facilities.

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Copyright information

© Springer Nature B.V. 2018

Authors and Affiliations

  • Kasirajan Prakash
    • 1
  • Puvaneswaran Senthil Kumar
    • 1
  • Sekar Pandiaraj
    • 2
  • Swaminathan Karuthapandian
    • 1
    Email author
  1. 1.Department of ChemistryVHNSN CollegeVirudhunagarIndia
  2. 2.Department of ChemistryNational Institute of Technology, TrichyTiruchirappalliIndia

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