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Photonic Network Communications

, Volume 37, Issue 1, pp 120–130 | Cite as

Design of a loop-based random access memory based on the nanoscale quantum dot cellular automata

  • Saba Rezaie Fam
  • Nima Jafari NavimipourEmail author
Original Paper
  • 46 Downloads

Abstract

The use of modern quantum dot cellular automata (QCA) on the nanoscale gives better results than complementary metal–oxide–semiconductor (CMOS) technology such as diminution power consumption, augmentation clock frequency and device density enhancement. Thereupon, it becomes a substantial technology for forming whole varieties of memory. Random access memory (RAM) is an essential element of any computer set where the operating system, application programs and data can be kept to rapidly admonition via the main processor. The RAM is extremely swifter to read from and write into other kinds of the computer storages. There are some QCA cells for memory structures, wherein their specifications are used to design more optimized structures than CMOS. The offered techniques in the previous studies lead to extend in the consumption area, and the circuit complexity. So, in this paper a new single-bit QCA-based RAM is proposed to overcome these weaknesses. Ultimately, 4 × 1 RAM is designed by applying the single-bit memory. The operational authenticity of the offered layouts is demonstrated utilizing QCADesigner. Also, the QCAPro tool is utilized for calculating the dissipated energy of the circuit. The obtained results have indicated that the offered design has a smaller number of cells, low complexity and low wire crossing. Also, the wasted area has optimized based on the one-level loop-based structure. The suggested D-latch has 24 QCA cells, and the wasted area is 0.02 μm2. Each memory structure in RAM layout has the wasted area of 0.06 μm2 and 55 QCA cells. Finally, the obtained results have confirmed that the proposed design improves cell numbers and wasted area.

Keywords

Quantum dot cellular automata Random access memory D-latch Nanoscale Energy consumption Nanoelectronics 

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Computer EngineeringTabriz Branch, Islamic Azad UniversityTabrizIran

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