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Plasma-Chemistry of Arsenic Selenide Films: Relationship Between Film Properties and Plasma Power

  • Leonid MochalovEmail author
  • Alexander Logunov
  • Anna Kitnis
  • Vladimir Vorotyntsev
Original Paper

Abstract

High quality amorphous arsenic selenide chalcogenide films of different structure and stoichiometry were synthesized via plasma-enhanced chemical vapor deposition (PECVD). The low-temperature non-equilibrium RF (13.56 MHz) argon inductively-coupled plasma at low pressure (0.1 Torr) was implemented for the process. Commercial high-pure elemental arsenic and selenium were utilized as the starting materials. The chemical content and the structure of the samples were altered via change of parameters of the plasma process. The in situ optical emission spectroscopy of the chemically active plasma was employed to pinpoint the ways of initiation of plasma-chemical interactions between precursors. The obtained characteristics of the arsenic selenide PECVD films have been compared with ones for CVD. The behavior of impurities of the carbon nature in the processes of PECVD and CVD deposition was also studied.

Keywords

Arsenic selenide films PECVD Optical emission spectroscopy Structural properties 

Notes

Acknowledgements

The reported study was supported by Russian Science Foundation, Grant No. 19-19-00,510 “Development of a novel plasma enhanced vapor phase method for deposition of gallium oxide films for applications in high-power electronics and in UV Schotky diodes”.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Leonid Mochalov
    • 1
    • 2
    Email author
  • Alexander Logunov
    • 2
  • Anna Kitnis
    • 2
  • Vladimir Vorotyntsev
    • 2
  1. 1.University of North Carolina at CharlotteCharlotteUSA
  2. 2.Nizhny Novgorod State Technical University n.a. R.E. AlekseevNizhny NovgorodRussia

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