Plasma Chemistry and Plasma Processing

, Volume 35, Issue 6, pp 979–991 | Cite as

Nitrogen Atmospheric-Pressure-Plasma-Jet Induced Oxidation of SnOx Thin Films

  • Guan-Wei Lin
  • Yu-Hao Jiang
  • Peng-Kai Kao
  • I-Chung Chiu
  • Yu-Han Wu
  • Cheng-Che Hsu
  • I-Chun Cheng
  • Jian-Zhang Chen
Original Paper

Abstract

SnOx thin films that were rf-sputter-deposited under various gas flow ratios ([O2]/([O2] + [Ar]) OFR = 3.0, 3.6, 4.2 and 4.8 %) were rapidly annealed using atmospheric pressure plasma jets (APPJs) in temperature range of ~350–386 °C for up to 5 min. The original electron probe micro-analysis [O] contents in the as-deposited films were ~25, ~30, ~35 and ~40 % for films deposited at ([O2]/([O2] + [Ar]) gas flow ratios OFR = 3.0, 3.6, 4.2 and 4.8 %, respectively. APPJ annealing increased the [O] content to ~35 % for films deposited at OFR = 3.0 and 3.6 %, where the [O] content remained in similar levels for films deposited at OFR = 4.2 and 4.8 %. Crystalline metallic Sn was identified in films as-deposited at OFR = 3.0 and 3.6 %; on the other hand, an X-ray amorphous SnOx phase was identified in films as-deposited at OFR = 4.2 and 4.8 %. Crystallization and oxidation by APPJ annealing improved the transmittance and blue-shifted the absorption band edge to ~420 nm. All APPJ-annealed films exhibit n-type conductivity that may be contributed by the mixed phases of SnO, SnO2 and a small amount of Sn.

Keywords

Atmospheric pressure plasma jet Oxidation  SnOx Sn SnO SnO2 

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Guan-Wei Lin
    • 1
  • Yu-Hao Jiang
    • 1
  • Peng-Kai Kao
    • 2
  • I-Chung Chiu
    • 3
  • Yu-Han Wu
    • 4
  • Cheng-Che Hsu
    • 2
  • I-Chun Cheng
    • 3
  • Jian-Zhang Chen
    • 1
  1. 1.Graduate Institute of Applied MechanicsNational Taiwan UniversityTaipeiTaiwan
  2. 2.Department of Chemical EngineeringNational Taiwan UniversityTaipeiTaiwan
  3. 3.Graduate Institute of Photonics and Optoelectronics and Department of Electrical EngineeringNational Taiwan UniversityTaipeiTaiwan
  4. 4.Materials and Chemical Research LaboratoriesIndustrial Technology Research InstituteChutungTaiwan

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