Oxidation of Metals

, Volume 62, Issue 3–4, pp 237–272 | Cite as

Oxidation Kinetics of Epitaxial (100) Copper Films at 25°C and 50°C

  • A. T. FromholdJr.
  • M. H. AndersonJr.

Abstract

Very-thin-film kinetics data are presented for oxide growth on parent epitaxially formed (100) copper crystals at 25 and 50°C with different oxygen pressures in the range 0.01 torr to 170 torr. The results are interpreted in terms of the model based on electric-field driven ionic diffusion associated with the electrostatic-potential difference created by an electron-tunnel- current-virtual equilibrium.

Copper Cu2Oxides Oxidation kinetics Particle transport 

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Copyright information

© Springer Science+Business Media, Inc. 2004

Authors and Affiliations

  • A. T. FromholdJr.
    • 1
  • M. H. AndersonJr.
    • 1
  1. 1.Department of PhysicsAuburn UniversityAuburnUSA

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