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Study on mechanically alloyed tin telluride screen-printed films for optoelectronic device applications

  • Vipin KumarEmail author
  • Kapil Sharma
  • D. K. Sharma
  • Vandana Grace Masih
Article
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Abstract

Narrow band gap semiconductor tin telluride (SnTe) was synthesized by mechanical alloying and its film was deposited on glass substrates by the economically and commercially feasible screen-printing technique. Deposition of the film was followed by sintering. Different analytical techniques were utilized to study the structure, surface morphology, elemental, optical and electrical characteristics of the film. X-ray diffraction analysis confirms that the film is polycrystalline in nature and exhibits rock salt type structure with preferred orientation of grains along (200) direction. EDAX spectrum confirms the presence of Sn and Te elements in the film. SEM image shows that the film exhibits uniform surface. The energy band gap of the film was determined by reflection spectra. The film is found to have a direct band gap of 0.37 eV. The dark electrical conductivity and activation energy of the film were measured in temperature range 300–380 K. Hall Effect measurement indicates that the film has p-type electrical conductivity.

Keywords

Semiconductors X-ray diffraction Electrical conductivity 

JEL classification

78.20.Ci 78.50.Ge 78.66.-w 78.66.Hf 

Notes

Acknowledgements

Author Vipin Kumar is grateful to Dr. (Col) Amik K. Garg (Director, KIET Group of Institutions) and Prof. C.M. Batra (Head, Dept. of Applied Science, KIET, Ghaziabad) for their constant support and encouragement during this work.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Vipin Kumar
    • 1
    Email author
  • Kapil Sharma
    • 1
  • D. K. Sharma
    • 1
  • Vandana Grace Masih
    • 2
  1. 1.Department of PhysicsKIET Group of InstitutionsGhaziabadIndia
  2. 2.Department of PhysicsUniversity of LucknowLucknowIndia

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