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Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection

  • Man Luo
  • Xiaoyao Chen
  • Peisong Wu
  • Hailu Wang
  • Yunfeng Chen
  • Fansheng ChenEmail author
  • Lili ZhangEmail author
  • Xiaoshuang ChenEmail author
Article
  • 9 Downloads

Abstract

Van der Waals heterojunctions based on atomically thin two-dimensional (2D) materials have attracted numerous attention for their special scientific research value and promising applications in photoelectric and micro-nano electronic devices. Especially, the carrier generation, separation, and extraction process in 2D materials can be easily modulated by external field, which may facilitate some multifunctional electronics and optoelectronics. In this paper, we report a unique type-II band alignment ReS2/MoTe2 heterojunction with rectification inversion due to the fact the bottom few-layer MoTe2 can be easily tuned from p-type to n-type state through the applied back-gate voltage. Then we study photodetection properties of ReS2/MoTe2 heterojunction, a relatively fast photoresponse time of 109 μs and a considerable photoresponsivity of 0.34 AW−1 for 520 nm at room temperature show great potential in photodetection. Our studies of ReS2/MoTe2 heterojunction with rectification inversion and high-performance photodetection will facilitate the development of electronics and optoelectronics based on atomically-thin heterojunctions.

Keywords

2D layer materials Heterojunction Rectification inversion Photodetection 

Notes

Acknowledgements

This work was supported in part by the Major State Basic Research Development Program (Grant No. 2018YFA0306204), National Natural Science Foundation of China (Grant Nos. 91850208 and 61804031).

Compliance with ethical standards

Conflict of interests

The authors declare no conflict of interests.

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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.State Key Laboratory of Infrared Physics, and Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina
  2. 2.Laboratory of Advanced MaterialFudan UniversityShanghaiChina
  3. 3.School of Physical Science and TechnologyShanghaiTech UniversityShanghaiChina
  4. 4.University of Chinese Academy of SciencesBeijingChina

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