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AlGaN optimization for photodetectors

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Abstract

AlGaN/GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV–visible wavelength range. In this work we present the results of phototransistors parameters simulation based on Sim Windows for improving efficiency and performance characteristics. We carried the out optimization in active area and an additional doping level profile. The Al mole fraction in the collector and emitter was varied from X = 0.2 to X = 0.3 during simulation. AlGaN-based HPT with an aluminum concentration 28% provides promising performance maximum efficiency with the highest sensitivity.

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Correspondence to Oleg Rabinovich.

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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 18.

Guest edited by Paolo Bardella, Weida Hu, Slawomir Sujecki, Stefan Schulz, Silvano Donati, Angela Traenhardt.

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Rabinovich, O., Savchuk, A., Didenko, S. et al. AlGaN optimization for photodetectors. Opt Quant Electron 51, 68 (2019). https://doi.org/10.1007/s11082-019-1791-2

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Keywords

  • AlGaN photodetector
  • Simulation
  • Doping
  • Sensitivity