Efficient coupling of the inhomogeneous current spreading model to the dynamic electro-optical solver for broad-area edge-emitting semiconductor devices
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We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edge-emitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.
KeywordsBroad area lasers Modeling Traveling wave Inhomogeneous current spreading Laplace problem Separation of variables Finite volumes Effective implementation
This work is supported by the German Federal Ministry of Education and Research contract 13N14005 as part of the EffiLAS/HotLas project.
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