Internal power loss in GaN-based lasers: mechanisms and remedies

Article
Part of the following topical collections:
  1. 2017 Numerical Simulation of Optoelectronic Devices

Abstract

GaN-based laser diodes transform only a relatively small fraction of the electrical input power into laser light. The inherently large series resistance of these devices causes significant self-heating that leads to the typical power roll-off at high current. We analyze recently reported measurements using advanced numerical laser simulation and investigate the physical mechanisms that limit the lasing power in continuous-wave operation. Contrary to common expectations, our analysis reveals a strong influence of Auger recombination since the self-heating leads to a rising quantum well carrier density above the lasing threshold. As possible remedy, we investigate the effect of a tunnel-junction contact and predict a significant enhancement of lasing power and efficiency.

Keywords

Laser diode InGaN/GaN Power Efficiency Auger recombination Series resistance Joule heating Hole conductivity Tunnel junction 

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Copyright information

© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  1. 1.NUSOD Institute LLCNewarkUSA

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