Electroluminescent cooling mechanism in InGaN/GaN light-emitting diodes

Article

DOI: 10.1007/s11082-016-0729-1

Cite this article as:
Piprek, J. & Li, ZM. Opt Quant Electron (2016) 48: 472. doi:10.1007/s11082-016-0729-1
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Part of the following topical collections:
  1. Numerical Simulation of Optoelectronic Devices 2016

Abstract

GaN-based light-emitting diodes (LEDs) are able to emit photons of higher energy than the injected electrons, resulting in an above-unity electrical efficiency. This phenomenon is generally attributed to heat extraction from the crystal lattice. In good agreement with measurements, we investigate the microscopic mechanism and the magnitude of such electroluminescent cooling by advanced numerical simulation including all relevant heat transfer mechanisms. Peltier cooling near the InGaN light-emitting layer is found to reduce the internal LED temperature rise significantly.

Keywords

Light-emitting diode InGaN/GaN LED Electroluminescent cooling Electroluminescent refrigeration Peltier cooling 

Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.NUSOD Institute LLCNewarkUSA
  2. 2.Crosslight Software Inc.VancouverCanada

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