Electroluminescent cooling mechanism in InGaN/GaN light-emitting diodes
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GaN-based light-emitting diodes (LEDs) are able to emit photons of higher energy than the injected electrons, resulting in an above-unity electrical efficiency. This phenomenon is generally attributed to heat extraction from the crystal lattice. In good agreement with measurements, we investigate the microscopic mechanism and the magnitude of such electroluminescent cooling by advanced numerical simulation including all relevant heat transfer mechanisms. Peltier cooling near the InGaN light-emitting layer is found to reduce the internal LED temperature rise significantly.
KeywordsLight-emitting diode InGaN/GaN LED Electroluminescent cooling Electroluminescent refrigeration Peltier cooling
- Galler, B.T.: Ph.D. Thesis, Albert Ludwigs University, Freiburg, Germany, 2014 (in German)Google Scholar
- Hurni, C.A., David, A., Cich, M.J., Aldaz, R.I., Ellis, B., Huang, K., Tyagi, A., DeLille, R.A., Craven, M.D., Steranka, F.M., Krames, M.R.: Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation. Appl. Phys. Lett. 106, 031101 (2015)ADSCrossRefGoogle Scholar
- Piprek, J.: Semiconductor Optoelectronic Devices—Introduction to Physics and Simulation. Academic Press, San Diego (2003)Google Scholar