Magnetoresistance of the p-(InSb + MnSb)/n-InSb diode structure
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Abstract
The p-(InSb + MnSb)/n-InSb diode structures have been produced by the pulse laser deposition method on the n-InSb single-crystal substrates from the targets in which positive giant magnetoresistance at 298 K in forward bias and at the application of the magnetic field of 0.15 T was observed. The I–V characteristics of the diode structure changed under the application of a magnetic field both in the plane of the structure, and perpendicular to it at the room temperature. The current magnitude of diode at a voltage of 1 V in the magnetic field 0.15 T, parallel and perpendicular to the plane of the diode structure, decreased by more than by 3 times from 28 to 8.2 mA and than by 10 times from 28 to 2.7 mA accordingly The values of parasitic resistance, the size of magneto-resistive effect for the p-(InSb + MnSb)/n-InSb diode have been defined without application of a field and in the presence of the 0.15 T magnetic field in the plane and perpendicular to the transition plane. The spin polarization of carriers has been calculated.
Keywords
Thin films InMnSb Magnetoresistance Magnetic heterostructure Pulse laser depositionNotes
Acknowledgments
This work has been supported by the grants of the Russian Foundation for Basic Research Nos. 15-07-03580, 15-29-01171, 14-07-00408, 14-07-00688, 14-03-90004, 14-47-03605, 15-38-20369, 15-07-03331.
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