The photoinduced voltage shift behavior in three-barrier resonant tunneling structure
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Resonant tunneling structures show negative differential resistance and enables many unique applications. Most researches have focused on structures with one or two barriers. In this paper, a three-barrier, two-well resonant tunneling structure integrated with a 1.2-µm-thick n-type GaAs layer are investigated numerically. The results show that the coupling between the energy level in the incident well and that in the central quantum well is the key point in understanding the origin of the current–voltage multi-peak at reverse bias. A photoinduced voltage shift manifests that the 1.2-µm-thick, slightly doped n-GaAs layer plays an important role in enhancing photoelectric sensitivity.
KeywordsResonant tunneling Quantum well Polarization Photoinduced voltage shift
This work was supported by National Scientific Research Plan (China, 2011CB932903) and State Scientific and Technological Commission of Shanghai (No. 118014546).
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