Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

  • Pyry Kivisaari
  • Toufik Sadi
  • Jani Oksanen
  • Jukka Tulkki
Article
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Part of the following topical collections:
  1. 2015 Conference on “Numerical Simulation of Optoelectronic Devices”

Abstract

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the \(1.5k_BT\) corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

Keywords

III–Nitride LEDs Monte Carlo simulations Hot carriers Non-equilibrium hole distribution 
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Notes

Acknowledgments

We acknowledge the financial support from the Nokia Foundation, the Finnish Cultural Foundation, and the Aalto Energy Efficiency Research Programme.

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Pyry Kivisaari
    • 1
  • Toufik Sadi
    • 2
  • Jani Oksanen
    • 3
  • Jukka Tulkki
    • 3
  1. 1.Division of Solid State PhysicsLund UniversityLundSweden
  2. 2.School of EngineeringUniversity of GlasgowGlasgowUK
  3. 3.School of ScienceAalto UniversityEspooFinland

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