Optical and Quantum Electronics

, Volume 47, Issue 5, pp 1117–1126 | Cite as

p-GaN/i-In\(_\mathrm{x }\)Ga1\(_\mathrm{x }\) N/n-GaN solar cell with indium compositional grading

  • Pramila Mahala
  • Sanjay Kumar Behura
  • Abhijit Ray
  • Chenna Dhanavantri
  • Omkar Jani
Article

Abstract

The effect of indium compositional grading on the performance of \(\hbox {p-GaN/i}\hbox {-}\hbox {In}_\mathrm{x}\hbox {Ga}_{1-\mathrm{x}}\hbox {N/GaN}\) solar cell has been investigated using TCAD Silvaco. An enhancement in efficiency of almost two times is found and this may be due to the increase in short circuit current density and open circuit voltage. This can be imputed to high carrier collection due to the reduction of band offset at the interface and high band bending in intrinsic layer. The optimized \(\hbox {GaN}/\hbox {In}_\mathrm{x}\hbox {Ga}_{1-\mathrm{x}}\hbox {N}\) solar cell with indium composition grading from 0 to 0.11, results fill factor of 77 %, short circuit current density of 0.99 mA/cm\(^{2}\) and open circuit voltage of 2.21 V under AM1.5G illumination.

Keywords

\(\hbox {In}_\mathrm{x}\hbox {Ga}_{1-\mathrm{x}}\hbox {N}\) GaN Solar cell Grading 

Notes

Acknowledgments

Authors wish to thank Prof. T. Harinarayana, Director-GERMI, Gandhinagar and Prof. Indrajit Mukhopadhyay, Head, Solar Research and Development Centre, PDPU, Gandhinagar.

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Pramila Mahala
    • 1
  • Sanjay Kumar Behura
    • 2
  • Abhijit Ray
    • 1
  • Chenna Dhanavantri
    • 3
  • Omkar Jani
    • 2
  1. 1.School of Solar EnergyPandit Deendayal Petroleum UniversityGandhinagar India
  2. 2.Solar Energy Research Wing, Gujarat Energy Research and Management Institute-Research Innovation and Incubation CentreGandhinagar India
  3. 3.CSIR-Central Electronics Engineering Research InstitutePilani India

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