Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors

Z. H. Ye; P. Zhang; Y. Li; Y. Y. Chen; S. M. Zhou; C. H. Sun; Y. Huang; C. Lin; X. N. Hu; R. J. Ding; L. He

doi:10.1007/s11082-014-9904-4

Optical and Quantum Electronics

October 2014, Volume 46, Issue 10, pp 1385–1390

Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors

Authors
Authors and affiliations

Z. H. YeEmail author
P. Zhang
Y. Li
Y. Y. Chen
S. M. Zhou
C. H. Sun
Y. Huang
C. Lin
X. N. Hu
R. J. Ding
L. He

Article

First Online:: 08 March 2014

Received:: 11 September 2013
Accepted:: 19 February 2014

DOI: 10.1007/s11082-014-9904-4

Cite this article as:: Ye, Z.H., Zhang, P., Li, Y. et al. Opt Quant Electron (2014) 46: 1385. doi:10.1007/s11082-014-9904-4

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Abstract

Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors is investigated in this work, utilizing the finite-difference time-domain technique. The quantum efficiency and the current–voltage characteristics have been numerically simulated, using Crosslight Technology Computer Aided Design software. Simulation results indicate that dark current is reduced more significantly in the photon trapping photodiode than in the mesa photodiode while maintaining the same quantum efficiency.

Keywords

Photon trapping photodiode IRFPA HgCdTe FDTD

References

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Authors and Affiliations

Z. H. Ye
- 1
Email author
P. Zhang
- 1
- 2
Y. Li
- 1
- 2
Y. Y. Chen
- 1
- 2
S. M. Zhou
- 1
C. H. Sun
- 1
Y. Huang
- 1
C. Lin
- 1
X. N. Hu
- 1
R. J. Ding
- 1
L. He
- 1

1.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai China
2.University of Chinese Academy of SciencesBeijing China

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Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors

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