Optical and Quantum Electronics

, Volume 47, Issue 6, pp 1397–1405 | Cite as

Circuit model of uni-traveling carrier photodiode with high power and enhanced bandwidth technique

Article

Abstract

An electrical equivalent circuit model of InGaAs/InP uni-travelling carrier photodiode (UTC-PD) is presented. The model is suitable to be built on any electrical circuit simulator to optimize the design parameters of the device. Its performance in terms of bandwidth, linearity, third order inter-modulation distortion and output photo current are investigated. Simulation techniques to measure inter-modulation distortion products and linearity are given in detail. The result obtained by the modeling technique is validated through a comparison with the reported experimental results. It is shown that 3 dB cutoff frequency and output photocurrent can be substantially improved by inserting a small inductance in series with the load together with choosing an optimum absorption layer width in UTC-PD. This technique does not sacrifice the device linearity to a large extent.

Keywords

Circuit model Frequency response Photodiode Inter-modulation 

Notes

Acknowledgments

The work is undertaken as part of Information Technology Research Academy (ITRA), Media Lab Asia project entitled “Mobile Broadband Service Support over Cognitive Radio Networks”.

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Institute of Radio Physics and ElectronicsUniversity of CalcuttaKolkataIndia
  2. 2.ITRA project “Mobile Broadband Service Support over Cognitive Radio Networks”IRPE-CUKolkataIndia

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