Optical and Quantum Electronics

, Volume 45, Issue 7, pp 699–706 | Cite as

Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure

  • L. Ding
  • L. Fan
  • Y. Q. Li
  • F. M. Guo


In this paper we present a physical modeling and simulation result of an optical memory cell based on a semiconductor quantum-dot in quantum-well hybrid structure. The physical modeling and simulation were done in Crosslight Apsys software which offers advanced models for photoelectric devices. We have optimized the scan conditions, iterative algorithm and other simulation parameters in order to obtain a solution. The calculated I–V and C–V curves agree with the experimental results and demonstrate that the cell can be used for photon storage.


Photon storage Quantum-dots Quantum-well APSYS Physical model 



This work was supported by National Scientific Research Plan (2006CB932802, 2011CB932903) and State Scientific and Technological Commission of Shanghai (No. 078014194, 118014546).


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Laboratory of Polar Materials and Devices, School of Information Science and TechnologyEast China Normal UniversityShanghaiPeople’s Republic of China

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