Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer
The advantages of ultraviolet light-emitting diodes with a single step quantum well used as electron blocking layer (EBL) are studied numerically. The energy band diagrams, hole concentrations, electrostatic field near the EBL, current–voltage curve and internal quantum efficiency (IQE) are investigated by using the Crosslight simulation programs. The simulation results show that the structure with a single step quantum well has better performance over the conventional one, which can be attributed to the mitigated band bending near the EBL due to the change of electrostatic field by using a step well. Therefore, the efficiency of hole injection is improved, with which both the IQE and the total lighting power are increased.
KeywordsStep quantum well Ultraviolet light-emitting diodes (UV-LEDs) Band bending Polarization
Unable to display preview. Download preview PDF.
- Hirayama H., Tsukada Y., Maeda T., Kamata N.: Marked enhancement in the efficiency of deep-ultraviolet alGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer. Appl. Phys. Express 3, 0310021–0310023 (2010)Google Scholar
- Liou B.T., Tsai M.C., Liao C.T., Yen S.H., Kuo Y.K.: Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells. Proc. SPIE 7211, 72111D-1–72111D-8 (2009)Google Scholar
- Shur, M.S., Gaska, R.: Deep-ultraviolet light-emitting diodes. Trans. Electron. Dev. IEEE 57(1), 12 (2010)Google Scholar