Advertisement

Optical and Quantum Electronics

, Volume 45, Issue 7, pp 617–622 | Cite as

Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties

  • M. Auf der MaurEmail author
  • F. Sacconi
  • A. Di Carlo
Article

Abstract

InGaN/GaN nanorod core-shell LEDs have shown to be very promising candidates for high efficiency lighting devices. Such nanorods can be grown in different ways, leading to different device geometry and in particular to different structures near the polar Ga- and N-face nanorod surfaces. In this work the influence of the properties of the polar surfaces on the electrical device behaviour is studied qualitatively based on a semiclassical simulation model.

Keywords

LED Nanorod Nitrides Simulation Surface effects 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Connors, B., Povolotskyi, M., Hicks, R., Klein, B.: Simulation and design of core-shell gan nanowire leds. In: Proceedings of the SPIE, vol. 7597, p 75970B (2010)Google Scholar
  2. Crawford M.H.: Leds for solid-state lighting: performance challenges and recent advances. IEEE J. Sel. Top. Quantum electron. 15(4), 1028–1040 (2009)MathSciNetCrossRefGoogle Scholar
  3. David A., Grundmann M.J.: Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis. Appl. Phys. Lett. 96(10), 103504-(1–3) (2010). doi: 10.1063/1.3330870 ADSCrossRefGoogle Scholar
  4. Deppner, M., Römer, F., Witzigmann, B., Ledig, J., Neumann, R., Waag, A., Bergbauer, W., Strassburg, M.: Computational study of carrier injection in iii-nitride core-shell nanowire-leds. In: Semiconductor conference Dresden (SCD), pp 1–4 (2011). doi: 10.1109/SCD.2011.6068745
  5. Koester R., Hwang J.S., Salomon D., Chen X., Bougerol C., Barnes J.P., Dang D.L.S., Rigutti L., de Luna Bugallo A., Jacopin G., Tchernycheva M., Durand C., Eymery J.: M-plane core-shell ingan/gan multiple-quantum-wells on gan wires for electroluminescent devices. Nano Lett. 11(11), 4839–4845 (2011). doi: 10.1021/nl202686n ADSCrossRefGoogle Scholar
  6. Li S., Waag A.: Gan based nanorods for solid state lighting. J. Appl. Phys. 111, 071101-(1–23) (2012). doi: 10.1063/1.3694674 ADSGoogle Scholar
  7. Mazuir C., Schoenfeld W.V.: Modeling of nitride based core/multishell nanowire light emitting diodes. J. Nanophotonics 1(4), 0135503-(1–12) (2007)Google Scholar
  8. O’Donnell, K.P., Auf~der Maur, M., Di Carlo, A., Lorenz, K., the SORBET~consortium: It’s not easy being green: Strategies for all-nitrides, all-colour solid state lighting. physica status solidi (RRL)—Rapid Res Lett 6(2):49–52 (2012). doi: 10.1002/pssr.201100206
  9. Piprek J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi A 207, 2217–2225 (2010)ADSCrossRefGoogle Scholar
  10. Povolotskyi M., Di Carlo A.: Elasticity theory of pseudomorphic heterostructures grown on substrates of arbitrary thickness. J. Appl. Phys. 100, 063514-(1–6) (2006)ADSCrossRefGoogle Scholar
  11. Römer, F., Deppner, M., Andreev, Z., Kölper, C., Sabathil, M., Strassburg, M., Ledig, J., Li, S., Waag, A., Witzigmann, B.: Luminescence and efficiency optimization of ingan/gan core-shell nanowire leds by numerical modelling. In: Proceedings of the SPIE 8255:82550H-(1–9) (2012)Google Scholar
  12. Scheibenzuber W.G., Schwarz U.T., Sulmoni L., Dorsaz J., Carlin J.F., Grandjean N.: Recombination coefficients of GaN-based laser diodes. J. Appl. Phys. 109(9), 093106-(1–6) (2011). doi: 10.1063/1.3585872 ADSCrossRefGoogle Scholar
  13. Wu J.: When group-III nitrides go infrared: new properties and perspectives. J. Appl. Phys. 106(1), 011101-(1–28) (2009)ADSGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  1. 1.Department of Electronic EngineeringUniversity of Rome “Tor Vergata”RomeItaly

Personalised recommendations