Atomistic simulation of InGaN/GaN quantum disk LEDs
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In this work electronic and optoelectronic properties of InGaN/GaN nanocolumn quantum disk LEDs have been studied with the multiscale simulation tool tiberCAD. Calculations have been performed with an atomistic tight-binding model. Results shows that emission energies have a minor dependence on the nanocolumn dimension while In concentration in the active region is a critical parameter.
KeywordsOptoelectronics properties GaN nanocolumn InGaN quantum disk Atomistic simulation Tight-binding
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- Barettin, D., Pecchia, A., Penazzi, G., Auf der Maur, M., Lassen, B., Willatzen, M., Di Carlo, A.: Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots. In: Proceedings of the 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD’11, 5th–8th September, Rome, Italy, 177–178 (2011)Google Scholar
- TiberCAD multiscale simulation software. http://www.tiberCAD.org