Band gap engineering approaches to increase InGaN/GaN LED efficiency
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Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs.
KeywordsLED Nitrides Simulation IQE Band gap engineering
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