Optical and Quantum Electronics

, Volume 44, Issue 3–5, pp 83–88 | Cite as

Band gap engineering approaches to increase InGaN/GaN LED efficiency

  • M. Auf der Maur
  • K. Lorenz
  • A. Di Carlo


Nitride-based quantum well (QW) LEDs for lighting applications suffer from efficiency issues related to the strong built-in fields due to the difference in electric polarization of the constituent materials. In this paper we present a study based on device simulation showing the beneficial impact of band gap engineering approaches on device performance in particular for green LEDs.


LED Nitrides Simulation IQE Band gap engineering 


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Copyright information

© Springer Science+Business Media, LLC. 2012

Authors and Affiliations

  1. 1.Department of Electronic EngineeringUniversity of Rome “Tor Vergata”RomeItaly
  2. 2.Unidade de Física e Aceleradores, Instituto Tecnologico e NuclearSacavémPortugal

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