Study on GaN-based light emitting diode with InGaN/GaN/InGaN multi-layer barrier
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- Cheng, LW., Xu, CY., Sheng, Y. et al. Opt Quant Electron (2012) 44: 75. doi:10.1007/s11082-011-9534-z
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The current study investigates GaN-based light-emitting diodes (LEDs) with InGaN/GaN/InGaN multi-layer barrier (MLB). Simulation results show that GaN-based LEDs with MLB have better performance than conventional GaN-based LEDs with only one GaN barrier because of the enhancement in hole injection into the quantum well and decrease in electron leakage current.