Optical and Quantum Electronics

, Volume 44, Issue 3–5, pp 75–81

Study on GaN-based light emitting diode with InGaN/GaN/InGaN multi-layer barrier

  • Li-Wen Cheng
  • Chun-Yan Xu
  • Yang Sheng
  • Chang-Sheng Xia
  • Wei-Da Hu
  • Wei Lu
Article

DOI: 10.1007/s11082-011-9534-z

Cite this article as:
Cheng, LW., Xu, CY., Sheng, Y. et al. Opt Quant Electron (2012) 44: 75. doi:10.1007/s11082-011-9534-z

Abstract

The current study investigates GaN-based light-emitting diodes (LEDs) with InGaN/GaN/InGaN multi-layer barrier (MLB). Simulation results show that GaN-based LEDs with MLB have better performance than conventional GaN-based LEDs with only one GaN barrier because of the enhancement in hole injection into the quantum well and decrease in electron leakage current.

Keywords

InGaN/GaN Light-emitting diode (LED) Multi-layer barrier Simulation 

Copyright information

© Springer Science+Business Media, LLC. 2011

Authors and Affiliations

  • Li-Wen Cheng
    • 1
  • Chun-Yan Xu
    • 2
  • Yang Sheng
    • 3
  • Chang-Sheng Xia
    • 3
  • Wei-Da Hu
    • 1
  • Wei Lu
    • 1
  1. 1.National Lab for Infrared PhysicsShanghai Institute of Technical Physics Chinese Academy of SciencesShanghaiChina
  2. 2.Wuxi Institute of Communications TechnologyWuxi CityChina
  3. 3.Crosslight Software ChinaShanghaiChina

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