Optical and Quantum Electronics

, Volume 44, Issue 3–5, pp 67–73

Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

Article

DOI: 10.1007/s11082-011-9509-0

Cite this article as:
Piprek, J. Opt Quant Electron (2012) 44: 67. doi:10.1007/s11082-011-9509-0

Abstract

The development and application of nitride-based light-emitting diodes (LEDs) is handicapped by the low hole conductivity of Mg-doped layers. Mg-doping becomes increasingly difficult with higher Al-content of the p-AlGaN layers as required for ultra-violet (UV) light emission. Polarization-induced hole doping of graded AlGaN was recently demonstrated as an alternative doping method. Using advanced numerical device simulation, this paper investigates the impact of polarization-doping on the internal device physics of UV-LEDs and compares the conventional Ga-face growth to the novel N-face growth direction. Various LED design options are explored to maximize the internal quantum efficiency.

Keywords

Light-emitting diode LED Ultra-violet AlGaN Doping Grading Acceptor Polarization Internal quantum efficiency 

Copyright information

© Springer Science+Business Media, LLC. 2011

Authors and Affiliations

  1. 1.NUSOD Institute LLCNewarkUSA

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