Optical and Quantum Electronics

, Volume 44, Issue 3–5, pp 67–73 | Cite as

Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

Article

Abstract

The development and application of nitride-based light-emitting diodes (LEDs) is handicapped by the low hole conductivity of Mg-doped layers. Mg-doping becomes increasingly difficult with higher Al-content of the p-AlGaN layers as required for ultra-violet (UV) light emission. Polarization-induced hole doping of graded AlGaN was recently demonstrated as an alternative doping method. Using advanced numerical device simulation, this paper investigates the impact of polarization-doping on the internal device physics of UV-LEDs and compares the conventional Ga-face growth to the novel N-face growth direction. Various LED design options are explored to maximize the internal quantum efficiency.

Keywords

Light-emitting diode LED Ultra-violet AlGaN Doping Grading Acceptor Polarization Internal quantum efficiency 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. APSYS by Crosslight software. www.crosslight.com
  2. Bernardini F.: Spontaneous and piezoelectric polarization: basic theory vs. practical recipes. In: Piprek, J. (ed.) Nitride Semiconductor Devices-Principles and Simulation, Weinheim, Wiley-VCH (2007)Google Scholar
  3. Hirayama H. et al.: Marked enhancement in the efficiency of deep-ultraviolet alGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer. Appl. Phys. Express 3, 031002 (2010)ADSCrossRefGoogle Scholar
  4. Piprek J., Li S.: GaN-based light-emitting diodes. In: Piprek, J. (eds) Optoelectronic Devices: Advanced Simulation and Analysis, Springer, New York (2005)CrossRefGoogle Scholar
  5. Piprek J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Stat. Sol. A 207, 2217–2225 (2010)ADSCrossRefGoogle Scholar
  6. Piprek J., Li S.: Electron leakage effects on GaN-based light-emitting diodes. Opt. Quantum Electron. 42, 89–95 (2010)CrossRefGoogle Scholar
  7. Simon J. et al.: Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science 327, 60–64 (2010)ADSCrossRefGoogle Scholar
  8. Zhang L. et al.: Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure. Appl. Phys. Lett. 97, 062103 (2010)ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC. 2011

Authors and Affiliations

  1. 1.NUSOD Institute LLCNewarkUSA

Personalised recommendations