Optical and Quantum Electronics

, Volume 42, Issue 11, pp 699–703

Modeling of polarization effects in InGaN PIN solar cells

  • M. Lestrade
  • Z. Q. Li
  • Y. G. Xiao
  • Z. M. Simon Li
Article

DOI: 10.1007/s11082-011-9458-7

Cite this article as:
Lestrade, M., Li, Z.Q., Xiao, Y.G. et al. Opt Quant Electron (2011) 42: 699. doi:10.1007/s11082-011-9458-7

Abstract

In this paper, we study the effect of polarization on the performance of InGaN solar cells. By using the APSYS software, we show that the performance of common device designs is adversely affected by the interface charges between the contact layers and absorber. An improved design based on graded layers in the \({[0 0 0\overline{1}]}\) or N-face growth direction is shown to be almost immune to these effects.

Keywords

Solar cell Nitride polarization N-face growth Numerical simulation 

Copyright information

© Springer Science+Business Media, LLC. 2011

Authors and Affiliations

  • M. Lestrade
    • 1
  • Z. Q. Li
    • 1
  • Y. G. Xiao
    • 1
  • Z. M. Simon Li
    • 1
  1. 1.Crosslight Software Inc.BurnabyCanada

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