Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser
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A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.
KeywordsTransistor laser VCSEL Numerical modeling Quantum-trap model Direct modulation
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- Crosslight Device Simulation Software—A General Description. Crosslight Software Inc. (2005)Google Scholar
- Faraji, B., Jaeger, N.A.F., Chrostowski, L.: Modelling the effect of the feedback on the small signal modulation of the transistor laser. In: Proceedings of 23rd Annual Meeting of the IEEE Photonics Society, vol. 11, p. WX4. Denver, CO, USA (2010)Google Scholar
- Sze S.M.: Physics of Semiconductor Devices, 2nd edn. Wiley-Interscience, New York (1981)Google Scholar
- Shirao, M., Lee, N.N.S., Arai, S.: Large signal analysis of AlGaInAs/InP laser transistor. In: Conference on Lasers and Electro-Optics. p. CMY7, San Jose, CA (2010)Google Scholar
- Then H.W., Feng M., Holonyak J.N.: Microwave circuit model for the three-port transistor laser. Appl. Phys. Lett. 107, 094509 (2010)Google Scholar
- Taflove A., Hagness S.C.: Computational Electrodynamics: The Finite-Difference Time-Domain Method. Artech House, Boston (2005)Google Scholar