(Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations

Optical and Quantum Electronics volume 40, pages 1273–1279 (2008)Cite this article

Abstract

The near-field lateral intensity distribution of 405 nm (Al,In)GaN laser diodes is measured in time and wavelength domain. Spectral properties, relaxation oscillations, and filaments are observed. A thermally induced change of the refractive index profile is found to be the driving force behind changes in the dynamic mode configuration. With rate equations those effects can be described in first approximation.

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  1. Institute of Physics, Regensburg University, 93040, Regensburg, Germany

    Ulrich T. Schwarz

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  1. Ulrich T. Schwarz
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Correspondence to Ulrich T. Schwarz.

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Schwarz, U.T. (Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations. Opt Quant Electron 40, 1273–1279 (2008). https://doi.org/10.1007/s11082-009-9327-9

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Keywords

  • Gallium nitride
  • Blue laser
  • Filaments
  • Thermal effects