Design considerations for guardring-free planar InGaAs/InP avalanche photodiode
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Abstract
Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p+-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed.
Keywords
Avalanche photodiode Edge breakdown 2D numerical simulationPreview
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References
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