Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes
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The effect of quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to an increased barrier height for electrons, leading to a reduced electron leakage. The theoretical predictions are supported by experimental data from red-emitting laser diodes with an improved characteristic temperature T0.
KeywordsRed lasers InGaAlP InGaP High-power Quantum wells
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- Chuang S.L.: Physics of Optoelectronic Devices. John Wiley & Sons Inc. (1995)Google Scholar
- Sumpf B., Zorn M., Staske R., Fricke J., Ressel P., Erbert G., Weyers M., Trankle G.: 5-W reliable operation over 2000h of 5-mm-wide 650-nm AlGaInP-GaInP-AlGaAs laser bars with asymmetric cladding layers. IEEE Photon. Technol. Lett. 18(18), 1955–1957 (2006). doi:10.1109/LPT.2006.882322 CrossRefADSGoogle Scholar
- Sumpf B., Zorn M., Staske R., Fricke J., Ressel P., Ginolas A., Paschke K., Erbert G., Weyers M., Trankle G.: 3-W Broad area lasers and 12-W bars with conversion efficiencies up to 40% at 650 nm. IEEE J. Select. Top. Quantum Electron 19(2), 1183–1193 (2007)Google Scholar