Optical and Quantum Electronics

, Volume 40, Issue 14–15, pp 1149–1154

Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes

  • Bocang Qiu
  • Stewart McDougall
  • Dan Yanson
  • John H. Marsh
Article

Abstract

The effect of quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to an increased barrier height for electrons, leading to a reduced electron leakage. The theoretical predictions are supported by experimental data from red-emitting laser diodes with an improved characteristic temperature T0.

Keywords

Red lasers InGaAlP InGaP High-power Quantum wells 

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Copyright information

© Springer Science+Business Media, LLC. 2009

Authors and Affiliations

  • Bocang Qiu
    • 1
  • Stewart McDougall
    • 1
  • Dan Yanson
    • 1
  • John H. Marsh
    • 1
  1. 1.Intense Ltd.Blantyre, GlasgowScotland, UK

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