Optical and Quantum Electronics

, Volume 40, Issue 14–15, pp 1255–1260 | Cite as

Simulation and design consideration of photoresponse for HgCdTe infrared photodiodes

Article
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Abstract

We report on 2D numerical simulations of photoresponse characteristic for long-wavelength HgCdTe infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated. Optimal thickness of absorption layers at different absorption lengths and diffusion lengths are extracted numerically. An empirical formula is proposed to predict reasonable optimal thickness of absorption layer by theoretically analyzing its correlations with absorption lengths and diffusion lengths.

Keywords

Numerical simulation Design HgCdTe infrared photodiode Photoresponse 
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Copyright information

© Springer Science+Business Media, LLC. 2009

Authors and Affiliations

  1. 1.National Lab for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of ScienceShanghaiChina

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