Characterization and optimization of high-power InGaAs/InP photodiodes
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The performance of 34-μm-diameter InGaAs/InP charge compensated modified uni-traveling carrier photodiodes (CC MUTCs) is studied using a commercial device simulator based on a drift-diffusion model. Excellent agreement has been achieved between simulations and experiments. The origin of the degradation of responsivity at high optical injection level is investigated. Parameters of the photodiode are further optimized to maximize the saturation current without sacrificing bandwidth and responsivity.
KeywordsPhotodiode High-power Saturation Modeling
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- Crosslight: www.crosslight.com, SimuApsys version 2007.3 (2007)