Optical and Quantum Electronics

, Volume 40, Issue 5–6, pp 301–306 | Cite as

Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm

  • Hongping Zhao
  • Ronald A. Arif
  • Yik-Khoon Ee
  • Nelson Tansu
Article

Abstract

Strain-compensated InGaN quantum wells with tensile AlGaN barriers are analyzed as improved gain media for laser diodes emitting at 420–500 nm. The band structure is calculated using the 6-band k ·p formalism, taking into account valence band mixing, strain effect, and spontaneous and piezoelectric polarizations. The optical gain analysis exhibits significant improvement in the peak optical gain and differential gain for the strain-compensated structures. The calculation also shows a significant reduction of threshold carrier density and current density for diode lasers employing the strain-compensated InGaN–AlGaN QW active regions.

Keywords

Strain-compensated QW InGaN QW gain media Diode lasers 

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References

  1. Arif, R.A., Ee, Y.K., Tansu, N.: Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl. Phys. Lett. 91, 091110 (2007)CrossRefADSGoogle Scholar
  2. Bernardini, F., Fiorentini, V.: Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences. Phys. Stat. Sol. (B) 216, 391 (1999)CrossRefGoogle Scholar
  3. Chuang, S.L.: Optical gain of strained wurtzite GaN quantum-well lasers. IEEE J. Quantum Electron. 32, 1791 (1996)CrossRefADSGoogle Scholar
  4. Guo, X., Li, Y.L., Schubert, E.F.: Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry. Appl. Phys. Lett. 79, 1936 (2001)CrossRefADSGoogle Scholar
  5. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., Mukai, T.: Superbright green InGaN single-quantum-well-structure light-emitting diodes. Jpn. J. Appl. Phys. 34, L1332 (1995)CrossRefADSGoogle Scholar
  6. Piprek, J.: Semiconductor Optoelectronic Devices. Academic Press (2003)Google Scholar
  7. Vurgaftman, I., Meyer, J.R.: Band parameters for nitrogen-containing semiconductors. J. Appl. Phys. 94, 3675 (2003)CrossRefADSGoogle Scholar
  8. Vurgaftman, I., Meyer, J.R.: Electron bandstructure parameters. In: Piprek, J. (ed.), Nitride semiconductor devices (Chapter 2). Wiley (2007)Google Scholar
  9. Zhang, J., Yang, J., Simin, G., Shatalov, M., Khan, M.A., Shur, M.S., Gaska, R.: Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers. Appl. Phys. Lett. 77, 2668 (2000)CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC. 2008

Authors and Affiliations

  • Hongping Zhao
    • 1
  • Ronald A. Arif
    • 1
  • Yik-Khoon Ee
    • 1
  • Nelson Tansu
    • 1
  1. 1.Department of Electrical and Computer Engineering, Center for Optical TechnologiesLehigh UniversityBethlehemUSA

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