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Optical and Quantum Electronics

, Volume 38, Issue 12–14, pp 953–961 | Cite as

Accurate modelling of InGaN quantum wells

Article

Abstract

The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN quantum wells are accurately computed by a self-consistent solution of the Poisson equation and an eight-band k · p Schrödinger equation taking into account charges due to polarisation fields, doping and free carriers. The results are used to compare luminescence and gain spectra for single and triple quantum well structures and to elucidate the effect of the polarisation fields.

Keywords

GaN InGaN quantum wells semiconductor lasers piezoelectric polarisation 

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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  1. 1.Ferdinand–Braun–Institut für HöchstfrequenztechnikBerlinGermany

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