Accurate modelling of InGaN quantum wells
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The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN quantum wells are accurately computed by a self-consistent solution of the Poisson equation and an eight-band k · p Schrödinger equation taking into account charges due to polarisation fields, doping and free carriers. The results are used to compare luminescence and gain spectra for single and triple quantum well structures and to elucidate the effect of the polarisation fields.
KeywordsGaN InGaN quantum wells semiconductor lasers piezoelectric polarisation
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- Zimmermann, R.: Many-Particle Theory of Highly excited Semiconductors, Vol.18 of Teubner–Texte zur Physik. Teubner, Leipzig, 1987.Google Scholar