Optical and Quantum Electronics

, Volume 38, Issue 12–14, pp 953–961 | Cite as

Accurate modelling of InGaN quantum wells

  • Hans Wenzel


The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN quantum wells are accurately computed by a self-consistent solution of the Poisson equation and an eight-band k · p Schrödinger equation taking into account charges due to polarisation fields, doping and free carriers. The results are used to compare luminescence and gain spectra for single and triple quantum well structures and to elucidate the effect of the polarisation fields.


GaN InGaN quantum wells semiconductor lasers piezoelectric polarisation 


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  1. Chow W., Kira M., Koch S.W. (1999) . Phys. Rev. B 60:1947CrossRefADSGoogle Scholar
  2. Christmas U.M.E., Andreev A.D., Faux D.A. (2005) J. Appl. Phys. 98:073522CrossRefGoogle Scholar
  3. Chuang S.L., Chang C.S. (1996) . Phys. Rev. B 54:2491CrossRefADSGoogle Scholar
  4. Enders P., Bärwolff A., Woerner M., Suisky D. (1995) . Phys. Rev. B 51:16695CrossRefADSGoogle Scholar
  5. Flory C.A., Hasnain G. (2001) . IEEE J. Quantum Electron. 37:244CrossRefGoogle Scholar
  6. Harris J.C., Kako S., Someya T., Arakawa Y. (1999) . Phys. Stat. Sol. B 216:423CrossRefGoogle Scholar
  7. Kollmer H., Im J.S., Heppel S., Off J., Scholz F., Hangleiter A. (1999) . Appl. Phys. Lett. 74:82CrossRefADSGoogle Scholar
  8. Mayrock O.,Wünsche H.-J., Henneberger F. (2000) . Phys. Rev. B 62:16870CrossRefADSGoogle Scholar
  9. Pacelli A. (1997) . IEEE Tran. Electron Devices 44:1169CrossRefGoogle Scholar
  10. Piprek J., Farrell R., DenBaars S., Nakamura S. (2006) . IEEE Photon. Techn. Lett. 18:7CrossRefGoogle Scholar
  11. Sirenko Y.M., Jeon J.B., Lee B.C., Kim K.W., Littlejohn M.A., Stroscio M.A., Iafrate G.J. (1997) . Phys. Rev. B 55:4360CrossRefADSGoogle Scholar
  12. Szmulowicz F. (1995) . Phys. Rev. B 51:1613CrossRefADSGoogle Scholar
  13. Trellakis A., Galick A.T., Pacelli A., Ravaioli U. (1997) . J. Appl. Phys. 81:7880CrossRefADSGoogle Scholar
  14. Zimmermann, R.: Many-Particle Theory of Highly excited Semiconductors, Vol.18 of Teubner–Texte zur Physik. Teubner, Leipzig, 1987.Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  1. 1.Ferdinand–Braun–Institut für HöchstfrequenztechnikBerlinGermany

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