All-optical AND gate based on Raman effect in silicon-on-insulator waveguide

Article

DOI: 10.1007/s11082-006-9021-0

Cite this article as:
Passaro, V.M.N. & de Passaro, F. Opt Quant Electron (2006) 38: 877. doi:10.1007/s11082-006-9021-0

Abstract

An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.

Keywords

integrated optics nonlinear optics silicon-on-insulator technology Raman scattering all-optical gate 

Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Vittorio M. N. Passaro
    • 1
  • Francesco de Passaro
    • 2
  1. 1.Dipartimento di Elettrotecnica ed ElettronicaPolitecnico di BariBariItaly
  2. 2.Dipartimento di Ingegneria dell’Ambiente e per lo Sviluppo SostenibilePolitecnico di BariTarantoItaly

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