Optical and Quantum Electronics

, Volume 38, Issue 4–6, pp 395–409 | Cite as

Mode Amplification in Inhomogeneous QD Semiconductor Optical Amplifiers



We present modelling results investigating the carrier dynamics of an SOA composed of an inhomogeneous array of quantum dots designed to produce broad gain amplification when optically pumped. We use a set of rate equations that describe the QDs inhomogeneity and include an energy dependent occupation factor within each inhomogeneously broadened level and numerically solve them with the propagation equation to investigate the amplification of optical signals in the waveguide. By treating the carrier filling according to the quasi-equilibrium distribution, we are able to investigate the effect of band-filling (BFE) on the gain and refractive index. The linewidth enhancement factor (α) is computed and analysed with respect to optical signal intensity as well as electrical current density.


linewidth enhancement factor (α) semiconductor optical amplifiers (SOA) quantum dots (QDs) 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. Agrawal, G.P., Olsson, N.A. 1989IEEE J. Quantum Electron252297CrossRefADSGoogle Scholar
  2. Asada, M. Quantum Well Lasers, chapter 2: Intraband Relaxation Effect on Optical Spectra. Quantum Electronics – Principles and Applications, Academic Press, 1993.Google Scholar
  3. Berg, T.W., Bischoff, S., Magnusdottir, I., Mork, J. 2001IEEE Photon. Technol. Lett.13541CrossRefGoogle Scholar
  4. Chow, W.W., S. W. Koch and M. S. III. Semiconductor – Laser Physics, Springer, 1997.Google Scholar
  5. Henry, C. 1982IEEE J. Quantum Electron18259CrossRefADSGoogle Scholar
  6. Jiang, H., Singh, J. 1999J. Appl. Phys.857438CrossRefADSGoogle Scholar
  7. Lee, J.I., Lee, H.G., Shin, E.J., Yu, S., Viswanath, K., Kim, D., Ihm, G. 1998Mat. Sci. Eng. B51122CrossRefGoogle Scholar
  8. McCoy, A.D., Horak, P., Thomsen, B.C., Ibsen, M., Mokhtar, M.R., Richardson, D.J. 2005IEEE Photon Technol. Lett.17241CrossRefGoogle Scholar
  9. Mork, J., Nielsen M.L., and Berg T.M.,. The dynamics of semiconductor optical amplifiers : modeling and applications. Technical report, Optics & Photonics News, July 2003. Available as http://www.osa-opn.org/abstract.cfm?URI=OPN-14-7-42.Google Scholar
  10. Nakata, Y., Sugiyama Y., and Sugawara M.,. Semiconductors and Semimetals, volume 60, chapter 1: Theoretical Bases of the Optical Properties of Semiconductor Quantum Nano-Structures, Academic Press, 1999.Google Scholar
  11. Ohtoshi, T., Yamanishi, M. 1991IEEE J. Quantum Electron.2746CrossRefGoogle Scholar
  12. Oksanen, J., Tulkki, J. 2003J. Appl. Phys.941983CrossRefADSGoogle Scholar
  13. Schneider H.C., Chow W.W., and Koch S.W. Phys Rev B 66 041310–1, 2002.Google Scholar
  14. Schneider, S., Borri, P., Langbein, W., Woggon, U., Selling, R.L., Ouyang, D., Bimberg, D. 2004IEEE J. Quantum Electron.401423CrossRefGoogle Scholar
  15. Sugawara, M., Akiyama, T., Hatori, N., Nakata, Y., Ebe, H., Ishikawa, H. 2002Meas. Sci. Technol.131683CrossRefADSGoogle Scholar
  16. Sugawara M., Ebe H., Hatori N., Ishida M., Arakawa Y., Akiyama T., Otsubo K., and Nakata Y.,. Phys. Rev. B 69 (235332)1, 2004.Google Scholar
  17. Wong, H.C., to be published. PhD thesis, University of Bristol, 2006.Google Scholar
  18. Wong, H.C., Dragas, M., Ren, G.B., Rorison, J.M. 2004Proc. of SPIE545233CrossRefADSGoogle Scholar
  19. Zhukov, A.E., Uatinov, V.M., Egorov, A.Y., Kovsh, A.R., Tsatsulnikov, A.F., Ledentsov, N.N., Zaitsey, S.V., Gordeev, N.Y., Kopev, P.S., Alferov, Z.I. 1997Jpn. J. Appl. Phys.364216CrossRefGoogle Scholar

Copyright information

© Springer 2006

Authors and Affiliations

  1. 1.Centre for Communications Research, Department of Electrical and Electronic EngineeringUniversity of BristolBristolUnited Kingdom

Personalised recommendations