Optical and Quantum Electronics

, Volume 38, Issue 4–6, pp 313–324

Optimization and Characterization of InGaAsN/GaAs Quantum-well Ridge Laser Diodes for High Frequency Operation

  • S. Bonnefont
  • B. Messant
  • M. Boutillier
  • O. Gauthier-Lafaye
  • F. Lozes-Dupuy
  • A. Martinez
  • V. Sallet
  • K. Merghem
  • L. Ferlazzo
  • J. C. Harmand
  • A. Ramdane
  • J. G. Provost
  • B. Dagens
  • J. Landreau
  • O. Le Gouezigou
  • X. Marie
Article

DOI: 10.1007/s11082-006-0032-7

Cite this article as:
Bonnefont, S., Messant, B., Boutillier, M. et al. Opt Quant Electron (2006) 38: 313. doi:10.1007/s11082-006-0032-7

Abstract

Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported. From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency operation. The gain characteristics are optimized by incorporating the minimum amount of nitrogen in the well to obtain the emission at 1.3 μm with a low transparency density and a high differential gain. We show that the number of wells must be adjusted to three to benefit of the best compromise between the threshold current and the differential gain. The effects of the cavity losses on the dynamic characteristics are evaluated and demonstrate the interest for high cavity losses to reach high relaxation frequency despite a lower characteristic temperature. An optimized structure has been realized and exhibits an emission at 1.34 μm with a transparency current density of 642 A/cm2 and a characteristic temperature T0 ~ 80 K. Dynamic properties for ridge devices are evaluated from relative intensity noise measurements and small-signal modulation. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are reported. We demonstrate transmission up to 10 Gb/s at 25°C without penalty and bit error floor.

Keywords

1.3 μm laser emission dilute nitride InGaAsN optical communications semiconductor laser 

Copyright information

© Springer 2006

Authors and Affiliations

  • S. Bonnefont
    • 1
  • B. Messant
    • 1
  • M. Boutillier
    • 1
  • O. Gauthier-Lafaye
    • 1
  • F. Lozes-Dupuy
    • 1
  • A. Martinez
    • 2
  • V. Sallet
    • 2
  • K. Merghem
    • 2
  • L. Ferlazzo
    • 2
  • J. C. Harmand
    • 2
  • A. Ramdane
    • 2
  • J. G. Provost
    • 3
  • B. Dagens
    • 3
  • J. Landreau
    • 3
  • O. Le Gouezigou
    • 3
  • X. Marie
    • 4
  1. 1.LAAS-CNRSToulouse cedex 4France
  2. 2.Laboratoire de Photonique et NanostructuresMarcoussisFrance
  3. 3.Alcatel Thales III-V labMarcoussisFrance
  4. 4.LNMO, INSA-CNRSToulouse cedex 4France

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