Kinetic Monte Carlo simulation of growth of Ge quantum dot multilayers with amorphous matrix
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Kinetic Monte Carlo method is used to simulate the growth of germanium quantum dot multilayers with amorphous matrix. We modified a model for self-assembled growth of quantum dots in crystalline matrix for the case of the amorphous one. The surface morphology given as hills above the buried dots is the main driving force for the ordering of the quantum dots. In the simulations, we observed a short-range self-ordering in the lateral direction. The ordering in lateral and vertical direction depends strongly on the surface morphology, mostly on the strength how the deposited material replicates previous surfaces.
KeywordsQuantum dot Multilayer Amorphous Kinetic Monte Carlo Modeling and simulations
The work was supported by the Czech Science Foundation (project no. 14-37427G). M. B. acknowledges the support of the Croatian Science Foundation (project no. 2334). The authors thank Martin Mixa for providing the source code of his simulation program which was modified for our purpose.
Compliance with ethical standards
This study was funded by the Czech Science Foundation (project number 14-37427G) and Croatian Science Foundation (project number 2334).
Conflict of interest
The authors declare that they have no conflict of interest.
- Bostedt C, van Buuren T, Willey T M, Franco N, Terminello L J, Heske C, Möller T (2004) Strong quantum-confinement effects in the conduction band of germanium nanocrystals. Appl Phys Lett 84:4056–4058Google Scholar
- Buljan M, Desnica U V, Dražić G, Ivanda M, Radić N, Dubček P, Salamon K, Bernstorff S, Holý V (2009a) The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix. Nanotechnology 20:085,612Google Scholar
- Buljan M, Desnica U V, Ivanda M, Radić N, Dubček P, Dražić G, Salamon K, Bernstorff S, Holý V (2009b) Formation of three-dimensional quantum-dot superlattices in amorphous systems: experiments and Monte Carlo simulations. Phys Rev B 79:035,310Google Scholar
- Buljan M, Jerčinović M, Siketić Z, Bogdanović-Radović I, Marion ID, Kralj M, Ivanda M, Turković A, Dražić G, Bernstorff S, Radić N (2013a) Tuning the growth properties of Ge quantum dot lattices in amorphous oxides by matrix type. J Appl Crystallogr 46:1490–1500Google Scholar
- Buljan M, Radić N, Ivanda M, Bogdanović-Radović I, Karlušić M, Grenzer J, Prucnal S, Dražić G, Pletikapić G, Svetličić V, Jerčinović M, Bernstorff S, Holý V (2013b) Ge quantum dot lattices in Al2O3 multilayers. J Nanopart Res 15:1485Google Scholar
- Buljan M, Roshchupkina O, Šantić A, Holý V, Baehtz C, Mücklich A, Lukáš, Horák, Valeš V, Radić N, Bernstorff S, Grenzer J (2013c) Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix. J Appl Crystallogr 46:709–715Google Scholar
- Edwards S F, Wilkinson D R (1982) The surface statistics of granular aggregate. Proc R Soc London Ser A 17:381Google Scholar
- Pinto S R C, Buljan M, Chahboun A, Roldan M A, Bernstorff S, Varela M, Pennycook S J, Barradas N P, Alves E, Molina S I, Ramos M M D, Gomes M J M (2012a) Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions. J Appl Phys 111:074,316Google Scholar
- Pinto S R C, Buljan M, Marques L, Martín-Sánchez J, Conde’ O, Chahboun A, Ramos A R, Barradas N P, Alves E, Bernstorff S, Grenzer J, Mücklich A, Ramos M M D, Gomes M J M (2012b) Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix. Nanotechnology 23:405,605Google Scholar
- Tavakoli A H, Maram P S, Widgeon S J, Rufner J, van Benthem K, Ushakov S, Sen S, Navrotsky A (2013) Amorphous alumina nanoparticles: structure, surface energy, and thermodynamic phase stability. J Phys Chem C 117:17,123–17,130Google Scholar
- Tersoff J, LeGoues F K (1994) Competing relaxation mechanisms in strained layers. Phys Rev Lett 72:3570–3573Google Scholar