Charge carrier dynamics investigation of CuInS2 quantum dots films using injected charge extraction by linearly increasing voltage (i-CELIV): the role of ZnS Shell

Research Paper

Abstract

The role of ZnS shell on the photo-physical properties within CuInS2/ZnS quantum dots (QDs) is carefully studied in optoelectronic devices. Linearly increasing voltage technique has been employed to investigate the charge carrier dynamics of both CuInS2 and CuInS2/ZnS QDs films. This study shows that charge carriers follow a similar behavior of monomolecular recombination in this film, with their charge transfer rate correlates to the increase of applied voltage. It turns out that the ZnS shell could affect the carrier diffusion process through depressing the trapping states and would build up a potential barrier.

Keywords

CuInS2 Quantum dots I-CELIV (injected charge extraction by linearly increasing voltage) Charge recombination Optoelectronic devices 

Notes

Acknowledgments

This work was supported by the National Natural Science Foundation of China (No. 51502109, 21573094, 11274142, and 11474131), the Open Project of State Key Laboratory of Superhard Materials (Jilin University), the National Found for Fostering Talents of Basic Science (No. J1103202), and the Chinese Scholarship Council for providing financial support during visiting University of California at Irvine.

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Copyright information

© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  1. 1.Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of PhysicsJilin UniversityChangchunPeople’s Republic of China
  2. 2.Department of ChemistryUniversity of CaliforniaIrvineUSA
  3. 3.Department of Chemical EngineeringUniversity of MichiganAnn ArborUSA
  4. 4.Key Laboratory of Superhard Materials, College of PhysicsJilin UniversityChangchunChina

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