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Field emission current from a junction field-effect transistor

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Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.

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We would like to thank the Iran National Science Foundation (INSF) for partial financial support. Partial financial support of University of Tehran for this research is also acknowledged.

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Correspondence to Yaser Abdi.

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Monshipouri, M., Abdi, Y. Field emission current from a junction field-effect transistor. J Nanopart Res 17, 169 (2015). https://doi.org/10.1007/s11051-015-2974-9

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  • Field emission
  • Junction
  • Field effect
  • Transistor