Field emission current from a junction field-effect transistor
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Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.
KeywordsField emission Junction Field effect Transistor
We would like to thank the Iran National Science Foundation (INSF) for partial financial support. Partial financial support of University of Tehran for this research is also acknowledged.
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