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A novel humidity sensor based on NH2-MIL-125(Ti) metal organic framework with high responsiveness

  • Ying Zhang
  • Yu Chen
  • Yupeng Zhang
  • Huahua Cong
  • Bo Fu
  • Shanpeng WenEmail author
  • Shengping RuanEmail author
Research Paper

Abstract

A novel porous nanosized humidity-sensing material of amine-functionalized titanium metal organic framework (MOF), NH2-MIL-125(Ti), was investigated. NH2-MIL-125(Ti) nanoparticles with high phase purity and good physicochemical property were synthesized by a simple hydrothermal method. The nanosized MOF was characterized by X-ray diffraction and scanning electron microscope. The average size of the MOF nanoparticles is around 300 nm. Then NH2-MIL-125(Ti) humidity sensor was fabricated by coating the nanosized materials on interdigitated electrodes. The humidity sensor based on NH2-MIL-125(Ti) shows good linearity of RH (11–95 % RH), as well as fast response and recovery time. The RH detecting range is from 11 to 95 % RH at 100 Hz. The response and recovery time are about 45 and 50 s, respectively. Moreover, the sensing mechanism was discussed by complex impedance analysis in detail. These results indicate the potential application of NH2-MIL-125(Ti) in humidity sensors.

Keywords

Nanoparticle MOF Humidity sensor Complex impedance Nanosensor Process control 

Notes

Acknowledgments

The authors are grateful to National Natural Science Foundation of China (Grant Nos. 61275035 and 61274068), Chinese National Programs for High Technology Research and Development (Grant No. 2013AA030902), Project of Science and Technology Development Plan of Jilin Province (Grant No. 20120324), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (No. IOSKL2012KF03) for the supports to the study.

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  1. 1.State Key Laboratory on Integrated OptoelectronicsJilin UniversityChangchunChina
  2. 2.College of Electronic Science and EngineeringJilin UniversityChangchunChina
  3. 3.Institute of SemiconductorsChinese Academy of SciencesBejingChina

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