Wafer-scale fabrication of uniform Si nanowire arrays using the Si wafer with UV/Ozone pretreatment
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The electroless etching technique combined with the process of UV/Ozone pretreatment is presented for wafer-scale fabrication of the silicon nanowire (SiNW) arrays. The high-level uniformity of the SiNW arrays is estimated by the value below 0.2 of the relative standard deviation of the reflection spectra on the 4-in. wafer. Influence of the UV/Ozone pretreatment on the formation of SiNW arrays is investigated. It is seen that a very thin SiO2 produced by the UV/Ozone pretreatment improves the uniform nucleation of Ag nanoparticles (NPs) on the Si surface because of the effective surface passivation. Meanwhile, the SiO2 located among the adjacent Ag NPs can obstruct the assimilation growth of Ag NPs, facilitating the deposition of the uniform and dense Ag NPs catalysts, which induces the formation of the SiNW arrays with good uniformity and high filling ratio. Furthermore, the remarkable antireflective and hydrophobic properties are observed for the SiNW arrays which display great potential in self-cleaning antireflection applications.
KeywordsSilicon nanowire arrays UV/Ozone Wafer-scale Uniformity Self-cleaning
This study is supported by the National Natural Science Foundation of China (51172069, 50972032, 61204064, and 51202067), and the Ph.D. Programs Foundation of the Ministry of Education of China (20110036110006), and the Fundamental Research Funds for the Central Universities (Key project 11ZG02).
- Morton KJ, Nieberg G, Bai SF, Chou SY (2008) Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching. Nanotechnology 19(345301):1–6Google Scholar
- Peng KQ, Zhang ML, Lu AJ, Wong NB, Zhang RQ, Lee ST (2007) Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching. Appl Phys Lett 90(163123):1–3Google Scholar
- Peng KQ, Wang X, Lee ST (2009) Gas sensing properties of single crystalline porous silicon nanowires. Appl Phys Lett 95(243122):1–3Google Scholar
- Zhang XG (2001) Electrochemistry of silicon and its oxide. Etching of silicon, 1st edn. Kluwer Academic/Plenum, New York, pp 293–294Google Scholar