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Journal of Nanoparticle Research

, Volume 13, Issue 3, pp 1281–1287 | Cite as

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

  • Mahesh Kumar
  • Basanta Roul
  • Thirumaleshwara N. Bhat
  • Mohana K. Rajpalke
  • Neeraj Sinha
  • A. T. Kalghatgi
  • S. B. KrupanidhiEmail author
Research Paper

Abstract

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (~8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

Keywords

Indium nitride Kinetics Photoluminescence Scaling behavior Semiconductor quantum dot 

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Copyright information

© Springer Science+Business Media B.V. 2010

Authors and Affiliations

  • Mahesh Kumar
    • 1
    • 2
  • Basanta Roul
    • 1
    • 2
  • Thirumaleshwara N. Bhat
    • 1
  • Mohana K. Rajpalke
    • 1
  • Neeraj Sinha
    • 3
  • A. T. Kalghatgi
    • 2
  • S. B. Krupanidhi
    • 1
    Email author
  1. 1.Materials Research Centre, Indian Institute of ScienceBangaloreIndia
  2. 2.Central Research Laboratory, Bharat ElectronicsBangaloreIndia
  3. 3.Office of Principal Scientific Advisor, Government of IndiaNew DelhiIndia

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